BF419 Просмотр технического описания (PDF) - Philips Electronics

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производитель

BF419

NPN high-voltage transistor

Philips Electronics 

Philips Semiconductors

NPN high-voltage transistor

Product specification

BF419

FEATURES

• Low current (max. 100 mA)

• High voltage (max. 250 V).

APPLICATIONS

• Driver for line output transistors in colour television

receivers.

DESCRIPTION

NPN high-voltage transistor in a TO-126; SOT32 plastic

package.

PINNING

PIN

1

2

3

DESCRIPTION

emitter

collector connected to mounting base

base

handbook, halfpage

2

3

1

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

VCEO

ICM

Ptot

hFE

Cre

fT

collector-base voltage

collector-emitter voltage

peak collector current

total power dissipation

DC current gain

feedback capacitance

transition frequency

1 2 3 Top view

MAM254

Fig.1 Simplified outline (TO-126; SOT32)

and symbol.

CONDITIONS

open emitter

open base

Tmb ≤ 90 °C

IC = 20 mA; VCE = 10 V

IC = ic = 0; VCE = 30 V; f = 1 MHz

IC = 15 mA; VCE = 10 V; f = 100 MHz

TYP.

−

−

−

−

45

−

90

MAX.

300

250

300

6

−

3.5

−

UNIT

V

V

mA

W

pF

MHz

1997 Apr 09

2

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