BD137 Просмотр технического описания (PDF) - Continental Device India Limited
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BD137 Datasheet PDF : 4 Pages
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NPN EPITAXIAL SILICON POWER TRANSISTORS
ECB
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
DC Current Gain
*hFE Group
IC=0.15A, VCE=2V
-6
- 10
- 16
- 25
Collector Emitter Saturation Voltage
*VCE (sat)
IC=0.5A, IB=0.05A
Base Emitter On Voltage
*VBE(on)
*IC=0.5A, VCE=2V
*Pulse test:- Pulse width=300µs, duty cycle=2%
BD135 BD137
BD139
TO126
Plastic Package
MIN
MAX UNIT
40
100
63
160
100
250
160
400
0.5
V
1.0
V
Continental Device India Limited
Data Sheet
Page 2 of 4
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