BD135-10 Просмотр технического описания (PDF) - Comset Semiconductors

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BD135-10

SILICON PLANAR EPITAXIAL POWER TRANSISTORS.

Comset Semiconductors 

NPN BD135 – BD137 – BD139

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

BD135

-

- 0,1

IE=0 , VCB= 30 V

BD137

-

- 0,1

ICBO

Collector cut-off

current

IE=0 ,VCB = 30V

Tj= 125°C

BD139

BD135

BD137

BD139

-

-

-

-

0,1

10

µA

-

- 10

-

- 10

IEBO

Emitter cut-offcurrent IC=0, VEB=5 V

-

- 10 µA

VCEO(SUS)

Collector-Emitter

sustaning Voltage (1)

IB=0 , IC=30 mA

BD135

BD137

BD139

45 -

-

60 -

-

V

80 -

-

VCE(SAT)

Collector-Emitter

saturation Voltage (1)

IC=0.5 A,IB=50 mA

-

- 0,5 V

VCE=2 V, IC=5 mA

25 -

-

BDxxx

40 - 250

hFE

DC Current Gain (1) VCE=2 V, IC=150 mA BDxxx -10 63

- 160

BDxxx -16 100 - 250

VCE=2 V, IC=500 mA

25 -

-

VBE

Base-Emitter

Voltage(1)

VCE=2 V, IC=500 mA

-

-

1

V

fT

Transition frequency VCE=5 V, IC=50 mA , f= 35 MHz

- 250 - MHz

1. Measured under pulse conditions :tP <300µs, δ <2%.

25/09/2012

COMSET SEMICONDUCTORS

2|3

27/08/201225/09/2012

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