BD135-10 Просмотр технического описания (PDF) - Comset Semiconductors
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BD135-10 Datasheet PDF : 3 Pages
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NPN BD135 – BD137 – BD139
SILICON PLANAR EPITAXIAL POWER TRANSISTORS.
The BD135-BD137-BD139 are NPN Transistors
They are recommended for driver stages in hi-fi amplifiers and television circuits.
They are mounted in Jedec TO-126 plastic package.
PNP complements are BD136-BD138-BD140.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage (IE= 0)
VCEO
Collector-Emitter Voltage (IB= 0)
VCER
VEBO
IC
IB
PT
TJ
TStg
Collector-Emitter Voltage (RBE= 1 kΩ)
Emitter-Base Voltage (IC= 0)
Collector Current
Base current
Total power Dissipation
Junction Temperature
Storage Temperature
BD135
BD137
BD139
BD135
BD137
BD139
BD135
BD137
BD139
IC
ICM
IB
Tmb = 70°C
Value
45
60
100
45
60
80
45
60
100
5
1.5
2
0.5
8
150
-65 to +150
Unit
V
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-c
RthJ-a
Thermal Resistance, Junction-Case
Thermal Resistance, Junction-ambient in free air
Value
10
100
Unit
°C/W
°C/W
25/09/2012
COMSET SEMICONDUCTORS
1|3
27/08/201225/09/2012
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