VS-80RIA40 Просмотр технического описания (PDF) - Vishay Semiconductors

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VS-80RIA40

Phase Control Thyristors (Stud Version), 80 A

Vishay Semiconductors 

VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series

www.vishay.com

Vishay Semiconductors

1800

1600

At Any Rated Load Condition And With

Rated VRRM Applied Following Surge.

Initial TJ = 125°C

at 60 Hz 0.0083 s

at 50 Hz 0.0100 s

1400

1200

1000

80RIA Series

800

1

10

100

Number Of Equa l Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

2000 Maximum Non Repetitive Surge Current

1900

Versus Pulse Train Duration. Control

1800 Of Conduction May Not Be Maintained.

1700

Initial TJ = 125°C

1600

1500

No Voltage Reapplied

Rated VRRM Reapplied

1400

1300

1200

1100

1000

900 80RIA Series

800

700

0.01

0.1

1

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

10000

1000

100

TJ = 25°C

TJ = 125°C

10

80RIA Series

1

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

InstantaneousOn-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

1

Steady State Value

R thJC = 0.30 K/W

(DC Operation)

0.1

0.01

80RIA Series

0.001

0.0001

0.001

0.01

0.1

1

10

Sq uare Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance ZthJC Characteristics

Revision: 27-Sep-17

5

Document Number: 94392

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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