IRFBC40APBF Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRFBC40APBF

Power MOSFET

Vishay Semiconductors 

www.vishay.com

15 V

VDS

L

Driver

RG

20 V

tp

D.U.T

IAS

0.01 Ω

+

- VDAD

Fig. 12a - Unclamped Inductive Test Circuit

VDS

tp

IRFBC40A, SiHFBC40A

Vishay Siliconix

820

800

780

760

740

720

0

1.0 2.0

3.0 4.0

5.0 6.0

7.0

IAV, Avalanche Current (A)

Fig. 12d - Typical Drain-to-Source Voltage vs.

Avalanche Current

IAS

Fig. 12b - Unclamped Inductive Waveforms

1400

1200

1000

TOP

BOTTOM

ID

2.8 A

3.9 A

6.2 A

800

600

400

200

0

25

50

75

100

125

150

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

S16-0763-Rev. D, 02-May-16

6

Document Number: 91112

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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