IRFBC40APBF Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRFBC40APBF

Power MOSFET

Vishay Semiconductors 

www.vishay.com

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0

25

50

75

100

125

150

TC, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

10

IRFBC40A, SiHFBC40A

Vishay Siliconix

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

1

D = 0.50

0.20

0.1 0.10

0.05

0.02

0.01

0.01

0.00001

PDM

SINGLE PULSE

(THERMAL RESPONSE)

0.0001

0.001

0.01

t 1, Rectangular Pulse Duration (s)

t1

t2

Notes:

1. Duty factor D = t1/ t2

2. Peak TJ = PDM x ZthJC + TC

0.1

1

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S16-0763-Rev. D, 02-May-16

5

Document Number: 91112

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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