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IRFBC40APBF Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге
Компоненты Описание
производитель
IRFBC40APBF
Vishay
Vishay Semiconductors Vishay
IRFBC40APBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
www.vishay.com
IRFBC40A, SiHFBC40A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
1.2
42
10
20
Single
D
TO-220AB
G
FEATURES
• Low gate charge Qg results in simple drive
Requirement
• Improved gate, avalanche and dynamic dV/dt
ruggedness
Available
Available
• Fully characterized capacitance and avalanche voltage
and current
• Effective Coss specified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
S
D
G
S
N-Channel MOSFET
APPLICATIONS
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
TYPICAL SMPS TOPOLOGIES
• Single transistor forward
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRFBC40APbF
SiHFBC40A-E3
IRFBC40A
SiHFBC40A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 29.6 mH, Rg = 25 , IAS = 6.2 A (see fig. 12).
c. ISD 6.2 A, dI/dt 80 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
600
± 30
6.2
3.9
25
1.0
570
6.2
13
125
6.0
-55 to +150
300
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
S16-0763-Rev. D, 02-May-16
1
Document Number: 91112
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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