IRFBC40 Просмотр технического описания (PDF) - International Rectifier

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производитель

IRFBC40

HEXFET® Power MOSFET

International Rectifier 

IRFBC40A

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 600

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––

RDS(on)

Static Drain-to-Source On-Resistance –––

VGS(th)

Gate Threshold Voltage

2.0

–––

IDSS

Drain-to-Source Leakage Current

–––

Gate-to-Source Forward Leakage

–––

IGSS

Gate-to-Source Reverse Leakage

–––

––– –––

0.66 –––

––– 1.2

––– 4.0

––– 25

––– 250

––– 100

––– -100

V

V/°C

Ω

V

µA

nA

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA†

VGS = 10V, ID = 3.7A „

VDS = VGS, ID = 250µA

VDS = 600V, VGS = 0V

VDS = 480V, VGS = 0V, TJ = 125°C

VGS = 30V

VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

gfs

Forward Transconductance

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Coss

Output Capacitance

Coss

Output Capacitance

Coss eff. Effective Output Capacitance

Avalanche Characteristics

Min. Typ. Max. Units

Conditions

3.4 ––– ––– S VDS = 50V, ID = 3.7A

––– ––– 42

––– ––– 10

––– ––– 20

––– 13 –––

ID = 6.2A

nC VDS = 480V

VGS = 10V, See Fig. 6 and 13 „

VDD = 300V

––– 23 ––– ns ID = 6.2A

––– 31 –––

RG = 9.1Ω

––– 18 –––

RD = 47Ω,See Fig. 10 „

––– 1036 –––

VGS = 0V

––– 136 –––

VDS = 25V

––– 7.0 ––– pF ƒ = 1.0MHz, See Fig. 5

––– 1487 –––

––– 36 –––

––– 48 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 480V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 480V …

Parameter

EAS

Single Pulse Avalanche Energy‚

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

Thermal Resistance

Typ.

–––

–––

–––

Max.

570

6.2

13

Units

mJ

A

mJ

Parameter

RθJC

RθCS

RθJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Diode Characteristics

Typ.

–––

0.50

Max.

1.0

–––

62

Units

°C/W

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

2

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 6.2

A showing the

integral reverse

G

––– ––– 25

p-n junction diode.

S

––– ––– 1.5 V TJ = 25°C, IS = 6.2A, VGS = 0V „

––– 431 647 ns TJ = 25°C, IF = 6.2A

––– 1.8 2.8 µC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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