IRF830S Просмотр технического описания (PDF) - KEXIN Industrial

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Компоненты Описание

производитель

IRF830S

N-Channel MOSFET

KEXIN Industrial 

SMD Type

■ Typical Characterisitics

N-Channel MOSFET

IRF830S (KRF830S)

D.U.T.

+

-

Peak Dio de Recovery dV/dt Test Circuit

+

Circuit layout con siderations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

-

+

MOSFET

Rg

• dV/dt controlled by R g

+

• Driver same type as D.U.T.

• ISD controlled by duty factor “D”

- V DD

• D.U.T. - device under test

Driver gate drive

P.W.

Period

D=

P.W.

Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse

recovery

current

Body diode forward

current

dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt

V DD

Re-applied

voltage

Inductor current Body diode forward drop

Ripple ≤ 5 %

IS D

Note

a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

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