BSS84 Просмотр технического описания (PDF) - ZP Semiconductor

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BSS84

P-Channel Enhancement Mode MOSFET

ZP Semiconductor 

BSS84

P-Channel Enhancement Mode MOSFET

Feature

-50V/-0.13A, RDS(ON) =10Ω(MAX) @VGS = -5V, Ids=-0.1A

Super High dense cell design for extremely low RDS(ON)

Reliable and Rugged

SOT-23 for Surface Mount Package

SOT-23

Applications

● Power Management

Portable Equipment and Battery Powered Systems.

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

TA=25℃ Unless Otherwise noted

Symbol

VDS

VGS

ID

Electrical Characteristics

Parameter

Symbol

TA=25℃ Unless Otherwise noted

Test Conditions

Off Characteristics

Drain to Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250µA

Zero-Gate Voltage Drain Current

IDSS

VDS=-50V, VGS=0V

Gate Body Leakage Current, Forward

IGSSF

VGS=20V, VDS=0V

Gate Body Leakage Current, Reverse

IGSSR

VGS=-20V, VDS=0V

On Characteristics

Gate Threshold Voltage

VGS(th)

VGS= VDS, ID=-1mA

Static Drain-sourceOn-Resistance

RDS(ON)

VGS =-5V, ID =-0.1A

Drain-Source Diode Characteristics and Maximum Ratings

Drain-Source Diode Forward Voltage

VSD

VGS =0V, IS=-0.13A

Limit

-50

±20

-0.13

Units

V

V

A

Min Typ. Max Units

-50

-

-

V

-

-

-15

µA

-

-

100

nA

-

-

-100

nA

-0.8

-

-2.5

V

-

5

10

Ω

-2.5

V

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