DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

GBU808(2017) Просмотр технического описания (PDF) - HY ELECTRONIC CORP.

Номер в каталоге
Компоненты Описание
производитель
GBU808
(Rev.:2017)
HY
HY ELECTRONIC CORP. HY
GBU808 Datasheet PDF : 3 Pages
1 2 3
GLASS PASSIVATED
BRIDGE RECTIFIERS
FEATURES
Surge overload rating -200 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
Plastic material has U/L
the flammability classification 94V-0
Mounting postition:Any
GBU8005 thru GBU810
REVERSE VOLTAGE - 50 to 1000Volts
FORWARD CURRENT - 8.0 Amperes
GBU
.161(4.1)
.134(3.4)
.126(3.2)*45°
CHAMFER
.437(11.1)
.430(10.9)
.874(22.2)
.860(21.8)
.139(3.53)
.133(3.37)
.232(5.9)
.213(5.4)
.401(10.2)
.392(9.80)
+
.752(19.1)
.720(18.3)
.073(1.85)
- .057(1.45)
.100(2.54)
.085(2.16)
.080(2.03)
.065(1.65)
.720(18.29)
.680(17.27)
.047(1.2)
.035(0.9)
.106(2.7)
.091(2.3)
.210
.190
(5.3)
(4.8)
.210
.190
(5.3)
(4.8)
.210
.190
(5.3)
(4.8)
.022(.56)
.018(.46)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL GBU8005 GBU801 GBU802 GBU804 GBU806 GBU808 GBU810
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current @ TC=100(without heatsink)
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 4.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ TJ=25
@ TJ=125
I2t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
VDC
50
100
200
400
600
800
1000
I(AV)
8.0
2.9
IFSM
200
VF
1.0
IR
5.0
500
I2t
166
CJ
60
Typical Thermal Resistance to Ambient ( Note2)
RθJA
10
Typical Thermal Resistance to case( Note2)
RθJC
2.2
Typical Thermal Resistance to lead ( Note2)
RθJL
3
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +150
UNIT
V
V
V
A
A
V
μA
A2s
pF
/W
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm Cu plate heatsink.
3.The typical data above is for reference only(典型值仅供参考).
Rev. 8, 16-Mar-2017

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]