BUT18 Просмотр технического описания (PDF) - Philips Electronics

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Компоненты Описание

производитель

BUT18

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUT18; BUT18A

handbook, full pagewidth

102

IC

(A)

ICM max

10

IC max

1

MGB921

II

I

10−1

10−2

10−3

DC

BUT18

BUT18A

10−4

1

10

102

103 VCE (V) 104

Tmb = 25 °C.

I - Region of permissible DC operation.

II - Permissible extension for repetitive pulse operation.

Fig.2 Forward bias SOAR.

1999 Jun 11

4

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