IRF640 Просмотр технического описания (PDF) - First Components International
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IRF640 Datasheet PDF : 5 Pages
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IRF640 18A 200V N CHANNEL POWER MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 ӴA)
Drain-Source Leakage Current
(VDS = Rated VDSS, VGS = 0 V)
(VDS = 0.8Rated VDSS, VGS = 0 V, TJ = 125к)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 ӴA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 10A) *
Drain-Source On-Voltage (VGS = 10 V)
(ID = 5.0 A)
Forward Transconductance (VDS = 50 V, ID = 10 A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 30 V, ID = 10 A,
VGS = 10 V,
RG = 4.7ȍ) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 0.8Rated VDSS, ID = Rated ID,
VGS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = Rated ID,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
CIRF640
Min
Typ
200
2.0
6.8
36
16
26
4.5
7.5
Max
0.025
1.0
100
100
4.0
0.18
6.0
1600
750
300
30
60
80
60
63
Units
V
mA
nA
nA
V
ȍ
V
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
VSD
1.5
V
ton
**
ns
trr
450
ns
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