BAS16W Просмотр технического описания (PDF) - Willas Electronic Corp.
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BAS16W Datasheet PDF : 2 Pages
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WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAS16WTHRU
FM1200-M+
Pb Free Product
SWITCHING DIODE
Features
FEATU• RBEatSch process design, excellent power dissipation offers
Package outliSnOeT-323
z FbaesttteSr rwevietcrsheinlegakSagpeeceudrrent and thermal resistance.
• Low profile surface mounted application in order to
z FooprtimGiezenbeoraarldPsuparcpeo. se Switching Applications
SOD-123H
z •HLiogwhpCowoenrdlouscs,tahinghceefficiency.
• High current capability, low forward voltage drop.
z •PHbi-gFhresuergpeaccakpaagbeilitiys. available
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•RGouHaSrdprirnogdfuocr tofvoerrvpoaltcakgiengprcootedcetiosnu.ffix ”G”
•HUalltoragehnighfr-esepeperdosdwuictct hfoinrgp. acking code suffix “H”
z
• Silicon epitaxial planar chip, metal silicon junction.
•MLoeiasdtu-frreeeSpeanrtssitmiveietyt eLnevivreonl m1 ental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
1
0.071(1.8)
0.056(1.4)
3
2
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
Marking• :CasAe 2: Molded plastic, SOD-123H
0.031(0.8) Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750
y Maximum
Ratings and
Method
Electrical
2026
Characteristics,
Single
Diode
@Ta=25℃
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
r • Polarity : Indicated by cathode band
Parameter
• Mounting Position : Any
a Non-Repetitive
• Weight
Peak Reverse Voltage
: Approximated 0.011 gram
Symbol
VRM
Limit
100
Dimensions in inches and (millimeters)
Unit
V
Peak Repetitive Peak Reverse Voltage
VRRM
in Working PeakMReAvXeIrMseUVMolRtaAgTeINGS AND ELEVCRTWRM ICAL CHARACTE7R5ISTICS
V
DRCatBinlgoscakti2n5g℃Voamltabigeent temperature unless otherwise sVpeRcified.
RSMinSgleRpehvaesresheaVlfowlatavge,e60Hz, resistive of inductive
For capacitive load, derate current by 20%
loaVdR. (RMS)
53
V
lim Forward Continuous Current
RATINGS
AMvaerkrinaggCeoRdeectified Output Current
SYMBIOFML
300
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
FM180-MH
mA
FM1100-MH
FM1150-MH FM1200-MH
UN
IO 12
13
11450 15
16
18
m1A0
115 120
PMeaaxikmuFmorRweacurrdreSntuPregaek CReuvrerresne tV@oltat=ge1.0μs
VRRM
20
30
e Maximum RMS Voltage
@t =1.0s
VRMISFSM 14
21
r PMoawximeurmDDisCsBiploactkioinng Voltage
VDCPD 20
30
TMhaexirmmumalARveersaigsetaFnorcwearJduRneccttiifoiend CtourAremnt bient
IORθJA
420.0 50
218.0 35
24000 50
625
60
80
100
42
56
A70
60
80
m1W00
1.0
℃/W
150
200 Vo
105
140 Vo
150
200 Vo
Am
P JPueankcFtoiorwnarTdeSmurgpeeCruartruenrte8.3 ms single half sine-wave IFSM Tj
150
30
℃
Am
superimposed on rated load (JEDEC method)
Storage Temperature
Typical Thermal Resistance (Note 2)
RΘJATSTG
-55~+150
40
℃
℃/
ETLyEpiCcaTl JRunIcCtioAnLCaCpaHciAtaRncAe (CNoTteE1R) ISTICS
Operating Temperature Range
(Ta=25CT℃JJ
unless
o-5th5 etor+w1i2s5e
specified)
120
-55 to +150
P
℃
Storage Temperature Range
Parameter
TSTG
- 65 to +175
℃
Symbol
Test conditions
Min
Max
Unit
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
MRaxeimveurmsFeobrwrearadkVdooltawgne avto1l.t0aAgDeC
VVF(BR)
IR= 10µA 0.50
0.70 75
0.85
V0.9
0.92 Vo
Maximum Average Reverse Current at @T A=25℃
IR
RRateedveDrCseBlovcoklintaggVeollteagaekage curren@tT A=125℃
IR
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2-FToherwrmaarl RdevsiostlatnacgeeFrom Junction to Ambient
VF
VR=75V
VR=20V
IF=1mA
IF=10mA
IF=50mA
0.5
10
1
µA
mA
25
nA
0.715
0.855
V
1
IF=150mA
1.25
Diode capacitance
CD
VR=0, f=1MHz
2
pF
Reveres recovery time
IF=IR=10mA,Irr=0.1×IR,
trr
RL=100Ω
4
ns
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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