SI2301 Просмотр технического описания (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
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SI2301 Datasheet PDF : 3 Pages
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Plastic-Encapsulate Mosfets
Total Gate Charge
Gate-Source Charge
Qg
Qgs
VDS = -6V, ID = -2.8A, VGS =
-4.5V
11
14.5
nC
1.5
nC
Gate-Drain Charge
Qgd
2.1
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current 3
Drain-Source Diode Forward Voltage 4
IS
VSD
VGS = 0V, IS = -0.75A
-0.75
A
-1.2
V
1.Repetitive Rating : Pulse width limited by maximum junction temperatu. 2.Surface Mounted on FR4 Board,t<5 sec.
3.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. 4.Guaranteed by design, not subject to production testing.
SI2301 Typical Characteristics
10
-VGS=4.5,4,3,V
8
-VGS=2.5V
6
4
-VGS=2.0V
2
-VGS=1.5V
0
0
1
2
3
4
5
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
Ciss
800
600
400
Coss
200
Crss
0
0
2
4
6
8
10
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
10
25 C
8
6
4
2
TJ=125 C
-55 C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=-2.8A
1.9 VGS=-4.5V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P3 -P2
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