LM1MA151WAT1 Просмотр технического описания (PDF) - Leshan Radio Company
Номер в каталоге
Компоненты Описание
производитель
LM1MA151WAT1 Datasheet PDF : 3 Pages
| |||
LESHAN RADIO COMPANY, LTD.
Common Anode Silicon
Dual Switching diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SC-59 package which is designed for low
power surface mount applications.
• Fast t rr , < 10 ns
• Low C D , < 15 pF
• Available in 8 mm Tape and Reel
• Pb-Free Package is available
LM1MA151WAT1
LM1MA152WAT1
SC-59 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODES
40/80 V-100mA
SURFACE MOUNT
ORDERING INFORMATION
3
Device*
Package
Shipping
LM1MA151WAT1
LM1MA151WAT1G
(Pb-Free)
SC-59
SC-59
3000/Tape&Reel
3000/Tape&Reel
2
1
LM1MA152WAT1
LM1MA152WAT1G
(Pb-Free)
SC-59
SC-59
3000/Tape&Reel
3000/Tape&Reel
CASE 318D–03, STYLE5
SC–59
*Replace "T1"with "T3" in the Device Number to Order the 13inch/10,000 unit Reel.
MAXIMUM RATINGS (T A = 25°C)
Rating
Symbol Value
Unit
Reverse Voltage
LM1MA151WAT1 V R
40
Vdc
LM1MA152WAT1
80
Peak Reverse Voltage
LM1MA151WAT1 V RM
40
Vdc
LM1MA152WAT1
80
Forward Current
Single
Dual
IF
100
mAdc
150
Peak Forward Current
Single
Dual
I FM
225
mAdc
340
Peak Forward Surge Current Single
I (1)
FSM
500
mAdc
Dual
750
THERMAL CHARACTERISTICS
Rating
Symbo lMax
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
T stg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic
Symbol
Condition
Min
Reverse Voltage Leakage Current LM1MA151WAT1
IR
LM1MA152WAT1
Forward Voltage
VF
Reverse Breakdown Voltage LM1MA151WAT1 V R
LM1MA152WAT1
V R = 35 V
—
V R = 75 V
—
I F = 100 mA
—
I R = 100 µA
40
80
Diode Capacitance
Reverse Recovery Time
1. t = 1 SEC
CD
V R = 0, f = 1.0 MHz —
t (2)
rr
I F = 10 mA, V R = 6.0 V, —
R L = 100Ω, I rr = 0.1 I R
2. t rr Test Circuit
ANODE
3
2
1
CATHODE
Max
0.1
0.1
1.2
—
—
15
10
Unit
µAdc
Vdc
Vdc
pF
ns
LM1MA151/2WAT1-1/3
Share Link: 