1F1G Просмотр технического описания (PDF) - Yangzhou yangjie electronic co., Ltd
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производитель
1F1G Datasheet PDF : 4 Pages
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1F1G THRU 1F7G
RoHS
COMPLIANT
Fast Recovery Rectifier
Features
● High efficiency
● High current capability
● High reliability
● High surge current capability
● Low power loss
● Glass passivated chip junction
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Mechanical Data
● Package: R-1
Molding compound meets UL 94 V-0 flammability rating,
RoHS-compliant, Halogen free
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity:Color band denotes cathode end
■Maximum Ratings (Ta=25℃ Unless otherwise specified）
PARAMETER
SYMBOL UNIT 1F1G
1F2G
1F3G
1F4G
1F5G
1F6G
Device marking code
1F1G
1F2G
1F3G
1F4G
1F5G
1F6G
Repetitive Peak Reverse Voltage
VRRM
V
50
Average Forward Current @60Hz sine wave,
Resistance load, Ta=70℃
IF(AV)
A
Surge(Non-repetitive)Forward Current @60Hz
Half-sine wave, 1 cycle, Ta=25℃
IFSM
A
Storage Temperature
Tstg
℃
Junction Temperature
Tj
℃
100
200
400
600
800
1.0
30
-55 ~+150
-55~+150
1F7G
1F7G
1000
■Electrical Characteristics（Ta=25℃ Unless otherwise specified）
PARAMETER
SYMBOL UNIT TEST CONDITIONS 1F1G 1F2G 1F3G
Maximum instantaneous forward
voltage drop per diode
VFM
V IFM=1.0A
Maximum DC reverse current at
rated DC blocking voltage per diode
IRRM1
IRRM2
Ta=25℃
μA
Ta=125℃
Reverse Recovery time
trr
ns
IF=0.5A IR=1A
IRR=0.25A
150
Measured at 1MHZ and
Typical junction capacitance
Cj
pF Applied Reverse Voltage
of 4.0 V.D.C.
1F4G 1F5G
1.3
2.5
100
250
1F6G 1F7G
500
20
■Thermal Characteristics （Ta=25℃ Unless otherwise specified）
PARAMETER
SYMBOL UNIT
1F1G
1F2G
1F3G
1F4G
1F5G
1F6G
1F7G
Thermal Resistance(Typical)
RθJ-A
℃/W
95
S-A327
Rev. 2.0, 13-Mar-15
1/4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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