2N6740 Просмотр технического описания (PDF) - Continental Device India Limited
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производитель
2N6740 Datasheet PDF : 3 Pages
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2N6740
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to ambient
From junction to case
Tj
Tstg
Rth j–a
Rth j–c
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
VBE(off) = 1.5 V; VCE = 650 V
VBE(off) = 1.5 V; VCE = 650 V; TC = 125°C
Emitter cut-off current
IC = 0; VEB = 8V
Breakdown voltages
IC = 200 mA; IB = 0
IC = 1 mA; VBE = 1.5 V
IE = 1 mA; IC = 0
Saturation voltages
IC = 5 A; IB = 1 A
IC = 5 A; IB = 1 A; TC = 125°C
IC = 8 A; IB = 4 A
D.C. current gain
IC = 5 A; VCE = 3 V
ICEV
ICEV
IEBO
VCEO
VCEV
VEBO
VCEsat*
VBEsat*
VCEsat*
VCEsat*
hFE*
Output capacitance at f = 0.1 MHz
IE = 0; VCB = 10 V
Co
Transition frequency
IC = 200 mA; VCE = 10 V
fT
Small signal current gain
IC = 0.2A; VCE = 10V; f = 5 MHz
|hfe|
Switching time
VCC = 125 V; IC = 5 A
IB = 1 A; tp = 20 µs
Delay time
td
Rise time
tr
VCC = 125 V; IC = 5 A
IB1 = –IB2 = 1 A; tp = 20 µs
Storage time
ts
Fall time
tf
Second breakdown collector current
with base forward biased
VCE = 25 V; t = 0.5 s
I S/b
* Pulsed: pulse duration = 300 µs; duty factor ≤ 2%
max.
0.8 W/°C
max. 150 ºC
–65 to +150 ºC
70 °C/W
1.25 °C/W
max.
max.
max.
min.
min.
min.
max.
max.
max.
max.
min.
max.
max.
min.
min.
max.
min.
max.
0.1 mA
1 mA
2 mA
400 V
650 V
8.0 V
1.0 V
1.6 V
2.0 V
2.0 V
10
40
300 pF
50 pF
15 MHz
60 MHz
3
12
max.
max.
0.1 µs
0.5 µs
max.
max.
2.5 µs
0.4 µs
min.
4A
Continental Device India Limited
Data Sheet
Page 2 of 3
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