2N4375 Просмотр технического описания (PDF) - New Jersey Semiconductor

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производитель

2N4375

Silicon Controlled Rectifiers

New Jersey Semiconductor 

Switching

Criticol rate of rise of on-state current (note 1)

Typical delay time (note 1)

Typical circuit commuted turn-off time (note 2)

di/dt

tj

tq

100A/usec.

3.0 usec.

100 usec.

r J = 125"C

Tj = 125°C

Note 1: 'TM = 50A, V0 =• VDRM, VGT = 12V open circuit, 20 ohm-0.1 usec. rise time

Note 2: 'TM = 50A, di/dt = 5A/usec.,vR during turn-off interval = 50V min.,

reapplied dv/dt ~ 20V/usec., linear to rated VDRM, VGT •= 0V

Max, gate voltage to trigger

Max. nontriggering gate voltage

Max, gate current to trigger

Max. peak gate power

Average gate power

Max. peak gate current

Max. peak gate voltage (forward)

Max. peak gate voltage (reverse)

Triggering

VGT

VGD

'GT

PGM

PG(AV)

' GM

VGM

3.0V

0.25V

100mA

15W

3.0W

4.0A

10V

5.0V

TJ = 25" C

Tj = 125°C

Tj - 25°C

tp = 10 usec.

Max. leakage current

Max. reverse leakage

Critical rate of rise of off-state voltage

Blocking

'DRM.'RRM

'RRM.'DRM

dv/dt

10mA

100 /JA

lOOV/usec.

TJ =i25°c tt VDRM.VRRM

Tj =25°C & VRRM.VRRM

TJ =125°C

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