5082-3379 Просмотр технического описания (PDF) - Avago Technologies

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5082-3379

PIN Diodes for RF Switching and Attenuating

Avago Technologies 

Mechanical Specifications

The Avago Outline 15 package has a glass hermetic seal with

dumet leads. The lead finish is 95-5 tin-lead (SnPb) for all

PIN diodes. The leads on the Outline 15 package should be

restrictedsothatthebendstartsatleast1/16 inch(1.6  mm)

from the glass body. Typi­cal package inductance and ca-

pacitance are 2.5 nH and 0.13  pF, respectively. Marking is

by digital coding with a cathode band.

General Purpose Diodes

Electrical Specifications at TA = 25°C

Maximum

Minimum

Part

Total

Breakdown

Number

Capacitance

Voltage

5082-

CT (pF)

VBR (V)

Maximum

Residual Series

Resistance

RS (Ω)

Effective Carrier

Lifetime

τ (ns)

  General Purpose Switching and Attenuating

3001

0.25

200

1.0

100 (min.)

3039

0.25

150

1.25

100 (min.)

1N5719

0.3**

150

1.25

100 (min.)

3077

0.3

200

1.5

100 (min.)

  Band Switching

3188

1.0*

35

0.6**

70 (typ.)*

Test

Conditions

VR = 50 V

VR = VBR

*VR = 20 V

Measure

**VR = 100 V

IR ≤ 10 µA

f = 1 MHz

IF =100 mA

*IF = 20 mA

**IF = 10 mA

f = 100 MHz

IF = 50 mA

IR = 250 mA

*IF = 10 mA

*IR = 6 mA

Notes:

Typical CW power switching capability for a shunt switch in a 50Ω system is 2.5 W.

Reverse Recovery

Time

trr (ns)

100 (typ.)

100 (typ.)

100 (typ.)

100 (typ)

12 (typ.)

IF = 20 mA

VR = 10 V

90% Recovery

RF Current Controlled Resistor Diodes

Electrical Specifications at TA = 25°C

Max.

High

Low

Effective

Min.

Residual

Max.

Resistance

Resistance

Part

Carrier

Lifetime

Breakdown

Voltage

Series

Resistance

Total

Limit, RH (Ω)

Limit, RL (Ω)

Capacitance

Number

τ (ns)

VBR (V)

RS (Ω)

CT (pF)

Min.  Max.

Min.  Max.

5082-3080 1300 (typ.)

100

2.5

0.4

1000         

8**

1N5767* 1300 (typ.)

100

2.5

0.4

1000         

8**

5082-3379 1300 (typ.)

50

0.4       8**

5082-3081 2500 (typ.)

100

3.5

0.4

1500        

8**

Max.

Difference

in

Resistance

vs. Bias

Slope, Dc

Test

IF = 50 mA VR = VBR, IF = 100 mA VR = 50 V

IF = 0.01 mA

IF = 1.0 mA

Conditions IR = 250 mA Measure f = 100 MHz f = 1 MHz f = 100 MHz IF = 20 mA**

IR ≤ 10 µA

f = 100 MHz

*The 1N5767 has the additional specifications: τ = 1.0 msec minimum

          

             

IR = 1 µA maximum at VR = 50 V

VF = 1 V maximum at IF = 100 mA.

Batch

Matched at

IF = 0.01 mA

and 1.0 mA

f = 100 MHz



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