HSM2694 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HSM2694

Silicon Epitaxial Planar Diode for Tuner Band Switch

Hitachi -> Renesas Electronics 

HSM2694

Absolute Maximum Ratings (Ta = 25°C)

Item

Reverse voltage

Power dissipation

Junction temperature

Storage temperature

Operation temperature

Note: Two device total

Symbol

VR

Pd*

Tj

Tstg

Topr

Value

Unit

35

V

150

mW

125

°C

–45 to +125

°C

–20 to +60

°C

Electrical Characteristics (Ta = 25°C)*

Item

Symbol Min Typ Max Unit Test Condition

Reverse voltage

VR

Reverse current

IR

Forward voltage

VF

Capacitance

C

Forward resistance

rf

Note: Per one device

35

—

—

V

IR = 10µA

—

—

50

nA

VR = 25V

—

—

1.0

V

IF = 10mA

—

—

1.2

pF

VR = 6V, f = 1MHz

—

—

0.9

Ω

IF = 2mA, f = 100MHz

2.0

f = 100MHz

1.5

1.0

0.5

0

10–4

10–3

Forward current IF (A)

10–2

Fig.1 Forward resistance Vs. Forward current

2

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