BFG31 Просмотр технического описания (PDF) - Philips Electronics
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BFG31 Datasheet PDF : 7 Pages
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Philips Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFG31
hanPdtbootok1, .h2alfpage
(W)
1.0
0.8
0.6
0.4
0.2
0
0
50
MBB344
100
150
Ts
(
o
200
C)
Fig.2 Power derating curve.
handbook,8h0alfpage
h FE
60
MBB345
40
20
0
0
100
I C (mA)
200
VCE = −10 V; Tamb = 25 °C.
Fig.3 DC current gain as a function of collector
current.
handbook, h6alfpage
C re
(pF)
5
4
3
2
1
0
10
MBB346
20 VCE (V) 30
f = 1 MHz; Tamb = 25 °C
Fig.4 Feedback capacitance as a function of
collector-emitter voltage.
8
handbook, halfpage
fT
(GHz)
6
MBB347
4
2
0
0
50
I C (mA)
100
VCE = −10 V; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current.
1995 Sep 12
4
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