BFG31 Просмотр технического описания (PDF) - Philips Electronics
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BFG31 Datasheet PDF : 7 Pages
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Philips Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFG31
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 135 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
40 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
Ccb
collector-base capacitance
Ceb
emitter-base capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain; note 1
Vo
output voltage
Vo
output voltage
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter; IC = −10 mA
−20 −
−
open base; IC = −10 mA
−18 −
−
open collector; IE = −0.1 mA −3 −
−
IE = 0; VCB = −10 V
−
−
−1
IC = −70 mA; VCE = −10 V;
25 −
−
Tamb = 25 °C
IC = 0; VCB = −10 V; f = 1 MHz; −
1.8 −
IC = 0; VEB = −10 V; f = 1 MHz −
5
−
IC = 0; VCE = −10 V; f = 1 MHz; −
Tamb = 25 °C
1.6 −
IC = −70 mA; VCE = −10 V;
−
5
−
f = 500 MHz; Tamb = 25 °C
IC = −70 mA; VCE = −10 V;
−
16 −
f = 500 MHz; Tamb = 25 °C
IC = −70 mA; VCE = −10 V;
−
12 −
f = 800 MHz; Tamb = 25 °C
note 2
−
600 −
V
V
V
µA
pF
pF
pF
GHz
dB
dB
mV
note 3
−
550 −
mV
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. dim = −60 dB; IC = −70 mA; VCE = −10 V; RL = 75 Ω; Tamb = 25 °C;
GUM
=
10
log --(--1-----–------s---1---1----2s---)-2--1-(---1-2----–------s---2--2-----2---)-
dB.
Vp = Vo at dim = −60 dB; fp = 850.25 MHz;
Vq = Vo −6 dB; fq = 858.25 MHz;
Vr = Vo −6 dB;fr = 860.25 MHz;
measured at f(p+q−r) = 848.25 MHz.
3. dim = −60 dB (DIN 45004B); IC = −70 mA; VCE = −10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo = at dim = −60 dB; fp = 445.25 MHz;
Vq = Vo −6 dB; fq = 453.25 MHz;
Vr = Vo −6 dB; fr = 455.25 MHz;
measured at f(p+q−r) = 443.25 MHz.
1995 Sep 12
3
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