KTC1003 Просмотр технического описания (PDF) - KEC
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KTC1003 Datasheet PDF : 2 Pages
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SEMICONDUCTOR
TECHNICAL DATA
KTC1003
EPITAXIAL PLANAR NPN TRANSISTOR
B/W TV HORIZONTAL DEFLECTION
OUTPUT APPLICATION.
FEATURES
ᴌLarge Collector Current Capability.
ᴌLarge Collector Power Dissipation Capability.
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc=25ᴱ)
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
200
60
5
4
10
1
30
150
-55ᴕ150
UNIT
V
V
V
A
A
W
ᴱ
ᴱ
A
U
E
L
L
M
D
D
NN
T
T
123
C
DIM MILLIMETERS
A
10.30 MAX
B
15.30 MAX
C
2.70Ź0.30
S
D
0.85 MAX
E
Ѹ3.20Ź0.20
F
3.00Ź0.30
G
12.30 MAX
T
RH
0.75 MAX
J
13.60Ź0.50
K
3.90 MAX
L
1.20
V
M
1.30
N
2.54
O
4.50Ź0.20
P
6.80
Q
2.60Ź0.20
H
R
10Ɓ
S
25Ş
T
5Ş
U
0.5
V
2.60Ź0.15
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
ICBO
IEBO
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
Transition Frequency
fT
TEST CONDITION
VCB=170V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=4A
IC=4A, IB=0.4A
IC=4A, IB=0.4A
VCE=5V, IC=0.5A
MIN.
-
-
30
20
-
-
-
TYP.
-
-
-
40
-
-
8.0
MAX.
10
10
150
-
1.0
1.5
-
UNIT
ỌA
ỌA
V
V
MHz
1995. 1. 23
Revision No : 0
1/2
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