1F3 Просмотр технического описания (PDF) - Yangzhou yangjie electronic co., Ltd
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1F3 Datasheet PDF : 4 Pages
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1F1 THRU 1F7
RoHS
COMPLIANT
Fast Recovery Rectifier
Features
● High efficiency
● High current capability
● High reliability
● High surge current capability
● Low power loss
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Mechanical Data
● Package: R-1
Molding compound meets UL 94 V-0 flammability rating,
RoHS-compliant, Halogen free
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity:Color band denotes cathode end
■Maximum Ratings (Ta=25℃ Unless otherwise specified）
PARAMETER
SYMBOL UNIT
1F1
1F2
1F3
1F4
1F5
1F6
Device marking code
1F1
1F2
1F3
1F4
1F5
1F6
Repetitive Peak Reverse Voltage
VRRM
V
50
Average Forward Current @60Hz sine wave,
Resistance load, Ta=45℃
IF(AV)
A
Surge(Non-repetitive)Forward Current
@60Hz Half-sine wave, 1 cycle, Ta=25℃
IFSM
A
Storage Temperature
Tstg
℃
Junction Temperature
Tj
℃
100
200
400
600
800
1.0
30
-55 ~+150
-55~+125
1F7
1F7
1000
■Electrical Characteristics（Ta=25℃ Unless otherwise specified）
PARAMETER
SYMBOL UNIT TEST CONDITIONS
1F1
Maximum instantaneous
forward voltage drop per
diode
VFM
V IFM=1.0A
Maximum DC reverse current
at rated DC blocking voltage
per diode
IRRM1
IRRM2
Ta=25℃
μA
Ta=100℃
Reverse Recovery time
Typical junction capacitance
trr
ns
IF=0.5A IR=1A
IRR=0.25A
Measured at 1MHZ and
Cj
pF Applied Reverse Voltage
of 4.0 V.D.C.
1F2
1F3
150
■Thermal Characteristics （Ta=25℃ Unless otherwise specified）
PARAMETER
SYMBOL UNIT
1F1
1F2
1F3
1F4
Thermal Resistance(Typical) RθJ-A
℃/W
85
1F4
1F5
1F6
1F7
1.3
2.5
100
250
500
20
1F5
1F6
1F7
S-A326
Rev. 2.0, 13-Mar-15
1/4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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