MMDT2907A Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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MMDT2907A Datasheet PDF : 4 Pages
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
MMDT2907A DUAL TRANSISTOR (PNP+PNP)
FEATURE
z Complementary NPN Type available MMDT2222A
SOT-363
MARKING: K2F
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-60
-5
-600
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Input Capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
td
tr
ts
tf
Test conditions
IC= -10μA, IE=0
IC= -10mA, IB=0
IE=-10μA, IC=0
VCB=-50V, IE=0
VCE=-30V,VEB(off)=-0.5V
VEB=-5V, IC=0
VCE=-10V, IC= -0.1mA
VCE=-10V, IC= -1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC= -150mA
VCE=-10V, IC=-500mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=- 50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB= -50mA
VCE=-20V, IC= -50mA,f=100MHz
VCB=-10V, IE= 0,f=1MHz
VEB=-2V, IC= 0,f=1MHz
VCC=-30V,IC=-150mA, IB1=-15mA
VCC=-6V, IC=-150mA,
IB1= IB2= -15mA
www.cj-elec.com
1
Min Max Unit
-60
V
-60
V
-5
V
-10
nA
-50
nA
-10
nA
75
100
100
100
300
50
-0.4
V
-1.6
V
-1.3
V
-2.6
V
200
MHz
8
pF
30
pF
10
ns
40
ns
225
ns
60
ns
E,Mar,2016
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