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MPSA27 Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание
производитель
MPSA27
Fairchild
Fairchild Semiconductor Fairchild
MPSA27 Datasheet PDF : 4 Pages
1 2 3 4
MPSA27/PZTA27
NPN General Purpose Amplifier
• This device is designed for applications requiring
extremely high current gain at collector currents to
500mA.
• Sourced from process 03.
• See MPSA28 for characteristics.
4
1
TO-92
1. Emitter 2. Base 3. Collector
3
2
1 SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector current
- Continuous
TJ, Tstg
Operating and Storage Junction Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
60
60
10
800
-55 ~ +150
NOTES:
1) These ratings are based on maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CES
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics
IC = 100µA, VBE = 0
IC = 10µA, IC = 0
IC = 100µA, IC = 0
VCB = 50V, IE = 0
VCE = 50V, VBE = 0
VEB = 10V, IC = 0
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
IC = 100mA, IB = 0.1mA
IC = 100mA, VCE = 5.0V
fT
Current Gain Bandwidth Product
IC = 10mA, VCE = 5.0V,
f = 100MHz
Min. Typ. Max. Units
60
V
60
V
10
V
100 nA
500 nA
100 nA
10000
10000
1.5 V
2.0 V
125
MHz
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Max.
MPSA27
*PZTA27
PD
Total Device Dissipation
Derate above 25°C
625
1000
5.0
8.0
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA
Thermal Resistance, Junction to Ambient
200
125
* Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm: mounting pad for the collector lead min. 6cm.
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, June 2002

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