MPSA26 Просмотр технического описания (PDF) - Philips Electronics
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MPSA26 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN Darlington transistors
Product specification
MPSA26; MPSA27
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
MPSA26
ICBO
collector cut-off current
MPSA27
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
VBEon
fT
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
CONDITIONS
IE = 0; VCB = 40 V
IE = 0; VCB = 50 V
IC = 0; VEB = 10 V
IC = 10 mA; VCE = 5 V; see Fig.2
IC = 100 mA; VCE = 5 V; see Fig.2
IC = 100 mA; IB = 0.1 mA
IC = 100 mA; IB = 0.1 mA
IC = 100 mA; VCE = 5 V
IC = 30 mA; VCE = 5 V; f = 100 MHz
MIN. TYP. MAX. UNIT
−
−
100 nA
−
−
100
−
−
100
10000 −
−
10000 −
−
−
−
1.5
−
−
1.5
−
−
2
125 220 −
nA
nA
V
V
V
MHz
1999 Apr 27
3
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