BCX17 Просмотр технического описания (PDF) - Philips Electronics

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Компоненты Описание

производитель

BCX17

PNP general purpose transistors

Philips Electronics 

Philips Semiconductors

PNP general purpose transistors

Product specification

BCX17; BCX18

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Note

1. Transistor mounted on an FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

500

UNIT

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

collector cut-off current

IEBO

emitter cut-off current

hFE

DC current gain

VCEsat

VBE

Cc

fT

collector-emitter saturation

voltage

base-emitter voltage

collector capacitance

transition frequency

CONDITIONS

IE = 0; VCB = −20 V

IE = 0; VCB = −20 V; Tj = 150 °C

IC = 0; VEB = −5 V

IC = −100 mA; VCE = −1 V

IC = −300 mA; VCE = −1 V

IC = −500 mA; VCE = −1 V

IC = −500 mA; IB = −50 mA

MIN. TYP. MAX. UNIT

−

−

−100 nA

−

−

−5 µA

−

−

−100 nA

100 −

600

70 −

−

40 −

−

−

−

−620 mV

IC = −500 mA; VCE = −1 V; note 1

−

−

IE = Ie = 0; VCB = −10 V; f = 1 MHz

−

9

IC = −10 mA; VCE = −5 V; f = 100 MHz 80 −

−1.2 V

−

pF

−

MHz

Note

1. VBE decreases by approximately −2 mV/°C with increasing temperature.

1999 May 31

3

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