BZV58C82 Просмотр технического описания (PDF) - Diotec Semiconductor Germany
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Компоненты Описание
производитель
BZV58C82 Datasheet PDF : 2 Pages
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BZV58 C8V2 … BZV58 C200 (5 W)
Maximum ratings
Type
Typ
BZV58 C 8.2
Zener voltage 2)
Zener-Spanng.2)
IZ = IZtest
VZmin [V] VZmax
7.7 8.7
BZV58 C 9.1 8.5 9.6
BZV58 C 10 9.4 10.6
BZV58 C 11 10.4 11.6
BZV58 C 12 11.4 12.7
BZV58 C 13 12.4 14.1
BZV58 C 15 13.8 15.6
BZV58 C 16 15.3 17.1
BZV58 C 18 16.8 19.1
BZV58 C 20 18.8 21.2
BZV58 C 22 20.8 23.3
BZV58 C 24 22.8 25.6
BZV58 C 27 25.1 28.9
BZV58 C 30 28 32
BZV58 C 33 31 35
BZV58 C 36 34 38
BZV58 C 39 37 41
BZV58 C 43 40 46
BZV58 C 47 44 50
BZV58 C 51 48 54
BZV58 C 56 52 60
BZV58 C 62 58 66
BZV58 C 68 64 72
BZV58 C 75 70 79
BZV58 C 82 77 88
BZV58 C 91 85 96
BZV58 C 100 94 106
BZV58 C 110 104 116
BZV58 C 120 114 127
BZV58 C 130 124 141
BZV58 C 150 138 156
BZV58 C 160 153 171
BZV58 C 180 168 191
BZV58 C 200 188 212
Grenzwerte
Test
current
Meßstrom
IZtest [mA]
Dyn. resistance
Diff. Widerst.
Iztest / 1 kHz
rzj [S]
Temp. Coeffiz.
of Z-voltage
…der Z-spanng.
"VZ [10-4//C]
150
< 1.5
+3…+8
Reverse volt.
Sperrspanng.
IR = 1 :A
VR [V]
> 3 (7.5:A)
Z-current 1)
Z-Strom 1)
TA = 50/C
IZmax [mA]
570
150
<2
+3…+8 >6.6 (7.5:A) 520
125
<2
+5…+9 > 7.6 (5:A) 470
125
< 2.5
+5…+10 > 8.3 (5:A) 430
100
< 2.5
+5…+10 > 9.1 (2:A) 390
100
< 2.5
+5…+10
> 9.9
350
75
< 2.5
+5…+10
> 11.4
320
75
< 2.5
+6…+11
> 12.2
290
65
< 2.5
+6…+11
> 13.7
260
65
<3
+6…+11
> 15.2
235
50
< 3.5
+6…+11
> 16.7
215
50
< 3.5
+6…+11
> 18.2
195
50
<5
+6…+11
> 20.5
170
40
<8
+6…+11
> 22.8
155
40
< 10
+6…+11
> 25
140
30
< 11
+6…+11
> 27.4
130
30
< 14
+6…+11
> 29.6
120
30
< 20
+7…+12
> 32.7
110
25
< 25
+7…+12
> 35.7
100
25
< 27
+7…+12
> 38.8
92
20
< 35
+7…+12
> 42.5
83
20
< 42
+8…+13
> 47.1
75
20
< 44
+8…+13
> 51.7
69
20
< 50
+8…+13
> 57
63
15
< 65
+8…+13
> 62.4
57
15
< 75
+9…+13
> 69.2
52
12
< 90
+9…+13
> 76
47
12
< 125
+9…+13
> 83.5
43
10
< 170
+9…+13
> 91.2
39
10
< 190
+9…+13
> 98.8
35
8
< 250
+9…+13
> 114
32
8
< 300
+9…+13
> 122
29
5
< 350
+9…+13
> 137
26
5
< 450
+9…+13
> 152
23
1) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2) Tested with pulses – Gemessen mit Impulsen
28.02.2002
219
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