LHF16J04 Просмотр технического описания (PDF) - Sharp Electronics

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производитель

LHF16J04

Flash Memory 16M (1M × 16/2M × 8)

Sharp Electronics 

LHFl6JO4

6

Symbol

Type

A-1

A,-‘419

INPUT

"Qo-DQ,,

INPUT/

OUTpUT

CE#

INPUT

_.

RP#

INPUT

OE#

INPUT

WE#

INPUT

WP#

INPUT

BYTE#

INPUT

RY/BY#

OPEN

DRAIN

OUTPUT

Vccw

SUPPLY

vcc

SUPPLY

GND

SUPPLY

NC

Table 1. Pin Descriptions

Name and Function

ADDRESS INPUTS: Inputs for addresses during read and write operations. Addresses are

internally latched during a write cycle.

A-,: Lower address input while BYTE# is V,,. A-, pin changes DQ, j pin while BYTE# is Vt,.

A, j-A,,: Main Block Address.

A,,-A,,: Boot and Parameter Block Address.

DATA INPUT/OUTPUTS: Inputs data and commands during CUI write cycles: outputs data

during memory array. status register and identifier code read cycles. Data pins float to high-

impedance when the chip is deselected or outputs are disabled. Data is internally latched during a

write cycle. DQs-DQ, j pins are not used while byte mode (BYTE#=V,,). Then. DQls pin

changes A-, address input.

CHIP ENABLE: Activates the device’s control logic. input buffers. decoders and sense amplifiers.

CE#-high deselects the device and reduces power consumption to standby levels.

RESET: Resets the device internal automation. RP#-high enables normal operation. When driven

low. RP# inhibits write operations which provides data protection during power transitions. Exit

from reset mode sets the device to read array mode. RP# must be V,, during power-up.

OUTPUT ENABLE: Gates the device’s outputs during a read cycle.

WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data are latched on

the rising edge of the WE# pulse.

WRITE PROTECT: When WP# is V,,. boot blocks cannot be written or erased. When WP# is

V,,, locked boot blocks can not be written or erased. WP# is not affected parameter and main

blocks.

BYTE ENABLE: BYTE# V,, places device in byte mode (x8). All data is then input or output on

DQO-,. and DQ,., j float. BYTE# V,, places the device in word mode (x16), and turns off the A-,

input buffer.

READY/BUSY#: Indicates the status of the internal WSM. When low, the WSM is performing an

internal operation (block erase. full chip erase. word/byte write or lock-bit configuration).

RY/BY#-high Z indicates that the WSM is ready for new commands. block erase is suspended,

and word/byte write is inactive. word/byte write is suspended. or the device is in reset mode.

BLOCK ERASE. FULL CHIP ERASE. WORD/BYTE WRITE OR LOCK-BIT

CONFIGURATION POWER SUPPLY: For erasing array blocks, writing words/bytes or

configuring lock-bits. With VCCW<VCCWLK. memory contents cannot be altered. Block erase, full

chip erase, word/byte write and lock-bit configuration with an invalid V,--w (see 6.2.3 DC

Characteristics) produce spurious results and should not be attempted. Applying 12Va0.3V to

Vc-w during erase/write can only be done for a maximum of 1000 cycles on each block. V,,,

may be connected to 12V@.3V for a total of 80 hours maximum.

DEVICE POWER SUPPLY: Do not float any power pins. With V&V,,,, all write attempts to

the flash memory are inhibited. Device operations at invalid V,, voltage (see 6.2.3 DC

Characteristics) produce spurious results and should not be attempted.

GROUND: Do not float any ground pins.

NO CONNECT: Lead is not internal connected: it may be driven or floated.

Rev. 1.25

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