LHF16J04 Просмотр технического описания (PDF) - Sharp Electronics

Номер в каталоге

Компоненты Описание

производитель

LHF16J04

Flash Memory 16M (1M × 16/2M × 8)

Sharp Electronics 

SHARP

LHF16504

3

1

1 INTRODUCTION

This

datasheet contains LH28F160BJHE-T-IL90

specifications. Section 1 provides a flash memory

overview. Sections 2. 3. 4 and 5 describe the memory

organization and functionality. Section 6 covers electrical

specifications.

1.1 Features

Key enhancements of LH28F16OBJHE-TTL90 boot block

Flash memory are:

Gingle low voltage operation

*Low power consumption

*Enhanced Suspend Capabilities

l Boot Block Architecture

Please note following:

l VCCWLK has been lowered to l.OV to support 2.7V-

3.6V block erase. full chip erase. word/byte write and

lock-bit configuration operations. The Vccw voltage

transitions to GND is recommended for designs that

switch Vccw off during read operation.

1.2 Product Overview

The LH28F160BJHE-TTL90 is a high-performance 16M-

ait Boot Block Flash memory organized as lM-word of 16

aits or 2M-byte of 8 bits. The lM-word/2M-byte of data is

u-ranged in two 4K-word/SK-byte boot blocks, six 4K-

word/8K-byte parameter blocks and thirty-one 32K-

vord/64K-byte main blocks which are individually

:rasable, lockable and unlockable in-system. The memory

nap is shown in Figure 3.

Ihe dedicated V ccw pin gives complete data protection

vhen V CCW’VCCWLK.

4 Command User Interface (CUD serves as the interface

jetween the system processor and internal operation of the

ievice. A valid command sequence written to the CUI

nitiates device automation. An internal Write State

vlachine (WSM) automatically executes the algorithms

md timings necessary for block erase, full chip erase.

vord/byte write and lock-bit configuration operations.

A block erase operation erases one of the device’s 32K-

word/6JK-byte blocks typically within 1.2s (3V Vcc. 3V

Vccw). JK-word/8K-byte blocks typically within 0.6s (3V

V,,. 3V Vccw) independent of other blocks. Each block

can be independently erased minimum 100,000 times.

Block erase suspend mode allows system software to

suspend block erase to read or write data from any other

block.

Writing memory data is performed in word/byte

increments of the device’s 32K-word blocks typically

within 33~s (3V V,,. 3V Vccw). 6JK-byte blocks

typically within 31~s (3V V,,. 3V Vccw). 4K-word

blocks typically within 36~s (3V Vcc. 3V V,,,), 8K-

byte blocks typically within 32~s (3V Vcc. 3V Vccw).

Word/byte write suspend mode enables the system to read

data or execute code from any other flash memory array

location.

Individual block locking uses a combination of bits, thirty-

nine block lock-bits. a permanent lock-bit and WP# pin. to

lock and unlock blocks. Block lock-bits gate block erase.

full chip erase and word/byte write operations. while the

permanent lock-bit pates block lock-bit modification and

locked block alternation. Lock-bit configuration

operations (Set Block Lock-Bit, Set Permanent Lock-Bit

and Clear Block Lock-Bits commands) set and cleared

lock-bits.

The status register indicates when the WSM‘s block erase,

fuli chip erase. word/byte write or lock-bit configuration

operation is finished.

The RY/BY# output gives an additional indicator of WSM

activity by providing both a hardware signal of status

(versus software polling) and status masking (interrupt

masking for background block erase, for example). Status

polling using RY/BY# minimizes both CPU overhead and

system power consumption. When low, RY/BY# indicates

that the WSM is performing a block erase. full chip erase.

word/byte write or lock-bit configuration. RY/BY#-high Z

indicates that the WSIM is ready for a new command.

block erase is suspended (and word/byte write is

inactive), word/byte write is suspended. or the device is in

reset mode.

Rev. 1.25

Share Link: