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Номер в каталоге
Компоненты Описание
BFP181(2001) Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
BFP181
(Rev.:2001)
NPN Silicon RF Transistor
Infineon Technologies
BFP181 Datasheet PDF : 7 Pages
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7
BFP181
Collector-base capacitance
C
cb
=
f
(
V
CB
)
f
= 1MHz
0.32
pF
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
4
8
12
16
V
22
V
CB
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= Parameter
10.0
GHz
8.0
7.0
10V
8V
5V
6.0
3V
5.0
2V
4.0
3.0
1V
0.7V
2.0
1.0
0.0
0 2 4 6 8 10 12 14
mA
17
I
C
Power Gain
G
ma
,
G
ms
=
f
(
I
C
)
f
= 0.9GHz
V
CE
= Parameter
24
dB
20
18
16
10V
5V
3V
2V
14
1V
12
0.7V
10
8
0 2 4 6 8 10 12 14
mA
18
I
C
Power Gain
G
ma
,
G
ms
=
f
(
I
C
)
f
= 1.8GHz
V
CE
= Parameter
18
dB
14
12
10
10V
5V
3V
2V
8
1V
6
0.7V
4
2
0
0 2 4 6 8 10 12 14
mA
18
I
C
6
Jun-21-2001
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