BFP181(2001) Просмотр технического описания (PDF) - Infineon Technologies

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производитель

BFP181
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFP181

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

AC characteristics (verified by random sampling)

Transition frequency

IC = 10 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Noise figure

IC = 2 mA, VCE = 8 V, ZS = ZSopt ,

f = 900 MHz

f = 1.8 GHz

fT

6

8

- GHz

Ccb

- 0.21 0.4 pF

Cce

- 0.27 -

Ceb

- 0.32 -

F

dB

- 1.45 -

-

1.8

-

Power gain, maximum stable 1)

Gms

IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

f = 1.8 GHz

-

20

-

- 16.5 -

Transducer gain

IC = 5 mA, VCE = 8 V, ZS = ZL = 50 ,

f = 900 MHz

f = 1.8 GHz

|S21e|2

- 16.5 -

- 11.5 -

1Gms = |S21 / S12|

3

Jun-21-2001

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