TIP110 Просмотр технического описания (PDF) - Comset Semiconductors
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производитель
TIP110 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
NPN TIP110-111-112
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-case From junction-case
RthJ-amb From junction-ambient
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
Value
2.5
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
TIP110
ICBO
Collector Cutoff Current IE= 0,VCB = VCBOmax TIP111 -
-
TIP112
ICEO
Collector Cutoff Current
IE= 0, VCE = 1/2
VCEOmax
TIP110
TIP111 -
-
TIP112
TIP110
IEBO
Emitter Cutoff Current VEB= 5 V, IC= 0
TIP111 -
-
TIP112
VCEO
Collector-Emitter
Breakdown Voltage (*)
IC= 30 mA, IB= 0
TIP110 60 -
TIP111 80 -
TIP112 100 -
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 2 A, IB= 8 mA
TIP110
TIP111 -
TIP112
-
VBE(on)
Base-Emitter Voltage
(*)
IC= 2 A, VCE= 4 V
TIP110
TIP111 -
TIP112
-
TIP110
VCE= 4 V, IC= 1 A
TIP111 1000 -
hFE
DC Current Gain (*)
TIP112
TIP110
VCE= 4 V, IC= 2 A
TIP111 500 -
TIP112
COB
Output Capacitance
IE= 0, VCB = 10 V
f= 0.1MHz
TIP110
TIP111 -
TIP112
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
1 mA
2 mA
2 mA
-
-
V
-
2.5 V
2.8 V
-
-
-
100 pF
05/10/2012
COMSET SEMICONDUCTORS
2 |3
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