TIP111 Просмотр технического описания (PDF) - Comset Semiconductors
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TIP111 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
NPN TIP110-111-112
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe.
They are designed for general purpose amplifier and low-speed switching applications.
PNP complements are TIP115-116-117
. Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICM
Collector Peak Current
IB
Base Current
@ Tc < 25°
PT
Power Dissipation
@ Ta < 25°
TJ
Junction Temperature
Ts
Storage Temperature range
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
TIP110
TIP111
TIP112
Value
60
80
100
60
80
100
5
2
4
50
50
2
150
-65 to +150
05/10/2012
COMSET SEMICONDUCTORS
Unit
V
V
V
A
A
mA
Watts
°C
1 |3
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