BCW68H Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

BCW68H

PNP General Purpose Amplifier

Galaxy Semi-Conductor 

Production specification

PNP General Purpose Amplifier

FEATURES

z For general AF applications.

z High current gain.

Pb

Lead-free

z Low collector-emitter saturation voltage.

z Complementary types:BCW65,BCW66(NPN).

BCW67/BCW68

APPLICATIONS

z This device is designed for general purpose amplifier

and switching applications.

ORDERING INFORMATION

Type No.

Marking

BCW67A/B/C

BCW68F/G/H

DA/DB/DC

DF/DG/DH

SOT-23

Package Code

SOT-23

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol Parameter

BCW67

BCW68

VCBO

Collector-Base Voltage

-45

-60

VCEO

Collector-Emitter Voltage

-32

-45

VEBO

Emitter-Base Voltage

--5

-5

ICM

Peak collector current

-1

IC

Collector Current -Continuous

-800

PD

Total Device Dissipation

330

RthJS

Junction thermal resistance

215

Tj,Tstg

Junction and Storage Temperature

-65 to +150

Unit

V

V

V

A

mA

mW

℃/W

℃

C161

Rev.A

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