Q62702-C825 Просмотр технического описания (PDF) - Infineon Technologies
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Q62702-C825 Datasheet PDF : 4 Pages
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NPN Silicon Darlington Transistor
q High current gain
q High collector current
q Complementary type: BC 516 (PNP)
BC 517
BC 517
2
3
1
1
Type
BC 517
Marking
–
Ordering Code
Q62702-C825
Pin Configuration
1
2
3
C
B
E
Package1)
TO-92
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TC = 66 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - case2)
Symbol
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
Unit
30
V
40
10
500
mA
800
100
200
625
mW
150
˚C
– 65 … + 150
Rth JA
Rth JC
≤ 200
K/W
≤ 135
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91
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