BC337-25(2003) Просмотр технического описания (PDF) - Diotec Semiconductor Germany

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производитель

BC337-25
(Rev.:2003)

Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

General Purpose Transistors

Characteristics (Tj = 25/C)

Collector-Emitter breakdown voltage

Collector-Emitter Durchbruchspannung

IC = 10 mA

BC 337

BC 338

V(BR)CES

V(BR)CES

IC = 0.1 mA

BC 337

BC 338

V(BR)CES

V(BR)CES

Emitter-Base breakdown voltage

Emitter-Basis-Durchbruchspannung

IE = 10 :A

V(BR)EB0

Collector saturation volt. – Kollektor-Sättigungsspannung

IC = 500 mA, IB = 50 mA

VCEsat

Base-Emitter voltage – Basis-Emitter-Spannung

VCE = 1 V, IC = 300 mA

VBE

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 50 MHz

fT

Collector-Base Cap. – Kollektor-Basis-Kap.

VCB = 10 V, f = 1 MHz

CCB0

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BC 337 / BC 338

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

40 V

–

–

20 V

–

–

50 V

–

–

30 V

–

–

5V

–

–

–

–

0.7 V

–

–

1.2 V

–

100 MHz

–

–

12 pF

–

RthA

200 K/W 1)

BC 327 / BC 328

Available current gain groups per type

Lieferbare Stromverstärkungsgruppen pro Typ

BC 337-16 BC 337-25 BC337-40

BC 338-16 BC 338-25 BC338-40

1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

01.11.2003

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