MCT6(2004) Просмотр технического описания (PDF) - Vishay Semiconductors
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Компоненты Описание
производитель
MCT6 Datasheet PDF : 7 Pages
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ILCT6/ MCT6
Vishay Semiconductors
Output
Parameter
Collector current
Collector-emitter breakdown voltage
Power dissipation
Derate linearly from 25 °C
Test condition
Coupler
Parameter
Isolation test voltage
Isolation resistance
Creepage
Clearance
Total package dissipation
Derate linearly from 25 °C
Storage temperature
Operating temperature
Lead soldering time at 260 °C
Test condition
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
Symbol
IC
BVCEO
Pdiss
Symbol
VISO
RIO
RIO
Ptot
Tstg
Tamb
Value
30
30
150
2
Value
5300
≥ 1012
≥ 1011
≥ 7.0
≥ 7.0
400
5.33
- 55 to + 150
- 55 to + 100
10
Unit
mA
V
mW
mW/°C
Unit
VRMS
Ω
Ω
mm
mm
mW
mW/°C
°C
°C
sec.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Junction capacitance
Test condition
IF = 20 mA
VR = 3.0 V
VF = 0 V
Symbol
Min
Typ.
Max
Unit
VF
1.25
1.50
V
IR
0.1
10
µA
Cj
25
pF
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-emitter leakage
current
Collector-emitter capacitance
Test condition
IC = 10 µA, IE = 10 µA
IC = 10 µA, IE = 10 µA
VCE = 10 V
VCE = 0 V
Symbol
Min
Typ.
Max
Unit
BVCEO
30
65
V
BVECO
7.0
10
V
ICEO
1.0
100
nA
CCE
8.0
pf
www.vishay.com
2
Document Number 83645
Rev. 1.4, 26-Oct-04
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