BSP75A Просмотр технического описания (PDF) - Siemens AG

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производитель

BSP75A

Smart Lowside Power Switch

Siemens AG 

Electrical Characteristics

Parameter and Conditions

at Tj = 25 °C, unless otherwise specified

Preliminary data sheet HITFET® BSP 75A

Symbol

Values

Unit

min typ max

Static Characteristics

Drain source clamp voltage

ID = 10 mA

Off state drain current

Tj =-40...+150°C:

VIN = 0 V, VDS = 32 V

Tj =-40...+150°C:

Input threshold voltage ID = 10 mA

Input current

normal operation, ID<ID(lim):

VIN = 5 V

current limitation mode, ID=ID(lim):

after thermal shutdown, ID=0 A:

On-state resistance

ID = 0.7 A, VIN = 5 V

On-state resistance

Tj=25°C:

Tj=150°C:

ID = 0.7 A, VIN = 10 V

Nominal load current(ISO 10483)

Tj=25°C:

Tj=150°C:

VIN = 10 V, VDS = 0.5 V, TS = 85°C

Current limit

VIN = 10 V, VDS = 12 V

VDS(AZ)

IDSS

VIN(th)

IIN(1)

IIN(2)

IIN(3)

RDS(on)

RDS(on)

ID(ISO)

ID(lim)

55

-- 70 V

--

--

5 µA

2 2.5

3V

-- 100 200 µA

-- 200 300

1000 1500 2000

-- 550 675 mΩ

-- 850 1350

-- 475 550 mΩ

-- 750 1000

0.7

--

-- A

1 1.5 1.9 A

Dynamic characteristics

Turn-on time

VIN to 90% ID:

RL = 22 Ω, VIN= 0 to 10 V, Vbb= 12 V

Turn-off time

VIN to 10% I D:

RL = 22 Ω, VIN= 10 to 0 V, Vbb= 12 V

Slew rate on

70 to 50% Vbb:

RL = 22 Ω, VIN = 0 to 10 V, Vbb = 12 V

Slew rate off

50 to 70% Vbb:

RL = 22 Ω, VIN= 10 to 0 V, Vbb= 12 V

ton

toff

-dVDS/dt on

dVDS/dt off

-- 10 20 µs

-- 10 20 µs

--

4 10 V/µs

--

4 10 V/µs

Semiconductor Group

Page 3

1998-02-04

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