BCW70LT1G(2009) Просмотр технического описания (PDF) - ON Semiconductor
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BCW70LT1G Datasheet PDF : 6 Pages
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BCW70LT1G
10
7.0
5.0
3.0
2.0 1.0 mA
1.0
10 20
TYPICAL NOISE CHARACTERISTICS
(VCE = − 5.0 Vdc, TA = 25°C)
1.0
BANDWIDTH = 1.0 Hz
7.0
RS ≈ 0
5.0
IC = 10 mA
3.0
IC = 1.0 mA
BANDWIDTH = 1.0 Hz
RS ≈ ∞
2.0
30 mA
100 mA
300 mA
300 mA
1.0
0.7
100 mA
0.5
0.3
30 mA
0.2
10 mA
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
0.1
10 20
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
NOISE FIGURE CONTOURS
(VCE = − 5.0 Vdc, TA = 25°C)
BANDWIDTH = 1.0 Hz
1.0 M
500 k
200 k
100 k
50 k
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (mA)
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
20 30 50 70 100
200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (mA)
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
10 Hz to 15.7 kHz
Noise Figure is Defined as:
0.5 dB
20 30 50 70 100
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200 300 500 700 1.0 k
ƪ ƫ NF + 20 log10
en2 ) 4KTRS ) In 2RS2
4KTRS
1ń2
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
I = Noise Current of the Transistor referred to the input.
n (Figure 4)
K = Boltzman’s Constant (1.38 x 10−23 j/°K)
T = Temperature of the Source Resistance (°K)
R = Source Resistance (Ohms)
S
IC, COLLECTOR CURRENT (mA)
Figure 5. Wideband
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