BCW70LT1G(2009) Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

BCW70LT1G
(Rev.:2009)

General Purpose Transistor

ON Semiconductor 

BCW70LT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −2.0 mAdc, IB = 0)

Collector−Emitter Breakdown Voltage

(IC = −100 mAdc, VEB = 0)

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = −20 Vdc, IE = 0)

(VCB = −20 Vdc, IE = 0, TA = 100°C)

ON CHARACTERISTICS

DC Current Gain

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −0.5 mAdc)

Base−Emitter On Voltage

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(IE = 0, VCB = −10 Vdc, f = 1.0 MHz)

Noise Figure

(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

Symbol

Min

Max

Unit

V(BR)CEO

V(BR)CES

V(BR)EBO

ICBO

−45

−50

−5.0

−

−

−

−

−

−100

−10

Vdc

Vdc

Vdc

nAdc

mAdc

hFE

VCE(sat)

VBE(on)

215

−

−0.6

500

−

−0.3

Vdc

−0.75

Vdc

Cobo

NF

−

7.0

pF

−

10

dB

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