BCW69LT1 Просмотр технического описания (PDF) - ON Semiconductor
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BCW69LT1 Datasheet PDF : 8 Pages
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BCW69LT1
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
1000
VCC = 3.0 V
700
IC/IB = 10
500
TJ = 25°C
300
200
VCC = − 3.0 V
IC/IB = 10
ts
IB1 = IB2
TJ = 25°C
tr
td @ VBE(off) = 0.5 V
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 10. Turn−On Time
50 70 100
100
70
50
tf
30
20
10
−1.0
− 2.0 − 3.0 − 5.0 − 7.0 −10 − 20 − 30
IC, COLLECTOR CURRENT (mA)
Figure 11. Turn−Off Time
− 50 − 70 −100
500
TJ = 25°C
300
VCE = 20 V
5.0 V
200
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 12. Current−Gain — Bandwidth Product
10
TJ = 25°C
7.0
Cib
5.0
3.0
2.0
Cob
1.0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Capacitance
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
P(pk)
FIGURE 16
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZθJA(t) = r(t) • RθJA
TJ(pk) − TA = P(pk) ZθJA(t)
5.0 10 20 50 100 200
t, TIME (ms)
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 1k00 k
Figure 14. Thermal Response
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