BCW68GLT1 Просмотр технического описания (PDF) - Motorola => Freescale

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BCW68GLT1

General Purpose Transistors PNP Silicon

Motorola => Freescale 

BCW68GLT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –10 mAdc, VCE = –1.0 Vdc)

(IC = –100 mAdc, VCE = –1.0 Vdc)

(IC = –300 mAdc, VCE = –1.0 Vdc)

Collector–Emitter Saturation Voltage (IC = –300 mAdc, IB = –30 mAdc)

hFE

120

160

60

VCE(sat)

—

—

—

400

—

—

—

—

—

–1.5

Vdc

Base–Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc)

SMALL–SIGNAL CHARACTERISTICS

VBE(sat)

—

—

–2.0

Vdc

Current–Gain — Bandwidth Product

(IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz)

fT

100

—

—

MHz

Output Capacitance

(VCB= –10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

—

18

pF

Input Capacitance

(VEB= –0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

—

—

105

pF

Noise Figure

(IC= –0.2 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz,

BW = 200 Hz)

NF

—

—

10

dB

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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