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TIP126 Просмотр технического описания (PDF) - Comset Semiconductors
Номер в каталоге
Компоненты Описание
производитель
TIP126
SILICON DARLINGTON POWER TRANSISTORS
Comset Semiconductors
TIP126 Datasheet PDF : 3 Pages
1
2
3
SEMICONDUCTORS
PNP TIP125-126-127
THERMAL CHARACTERISTICS
Symbol
Ratings
R
thJ-case
R
thJ-amb
From junction-case
From junction-ambient
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Value
1.92
62.5
Unit
°C/W
°C/W
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
I
CBO
Collector Cutoff
Current
I
E
= 0
V
CB
= -V
CBO
max
I
CEO
Collector Cutoff
Current
I
E
= 0
V
CE
= 1/2 -V
CEO
max
I
EBO
V
CEO
V
CE(SAT)
Emitter Cutoff
Current
Collector-Emitter
Breakdown Voltage
(*)
Collector-Emitter
saturation Voltage
(*)
V
EB
= -5 V
I
C
= 0
I
C
= -30 mA
I
B
= 0
I
C
= -3 A
I
B
= -12 mA
I
C
= -5 A
I
B
= -20 mA
V
BE(on)
Base-Emitter
Voltage (*)
I
C
= -3 A
V
CE
= -3 V
V
CE
= -3.0 V
I
C
= -0.5 A
h
FE
DC Current Gain (*)
V
CE
= -3.0 V
I
C
= -3 A
C
OB
Output Capacitance
I
E
= 0, V
CB
= -10 V
f
test
= 1MHz
(*) Pulse Width
≈
300
µ
s, Duty Cycle
∠
2.0%
TIP125
TIP126 -
-
TIP127
TIP125
TIP126 -
-
TIP127
TIP125
TIP126 -
-
TIP127
TIP125 -60 -
TIP126 -80 -
TIP127 -100 -
TIP125
TIP126 -
-
TIP127
TIP125
TIP126 -
-
TIP127
TIP125
TIP126 -
-
TIP127
TIP125
TIP126 1000 -
TIP127
TIP125
TIP126 1000 -
TIP127
TIP125
TIP126 -
-
TIP127
-0.2 mA
-0.5 mA
-2 mA
-
-
V
-
-2
V
-4
-2.5 V
-
-
-
200 pF
08/10/2012
COMSET SEMICONDUCTORS
2|3
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