US1A Просмотр технического описания (PDF) - Zibo Seno Electronic Engineering Co.,Ltd

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Компоненты Описание

производитель

US1A

1.0A SURFACE MOUNT ULTRAFAST DIODE

Zibo Seno Electronic Engineering Co.,Ltd 

Z ibo Seno Electronic Engineering Co., Ltd.

US1A – US1M

10

1.0

US1A - US1D

US1G

1.0

US1J - US1K

0.5

0.1

0

25

50

75

100

125

150

TL, LEAD TEMPERATURE

( ° C)

Fig. 1 Forward Current Derating Curve

40

Single Half Sine-Wave

(JEDEC Method)

30

20

10

Tj = 150°C

0

1

10

100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Forward Surge Current Derating Curve

50Ω NI (Non-inductive)

10Ω NI

(+)

50V DC

Approx

(-)

Device

Under

Test

1.0Ω

NI

Oscilloscope

(Note 1)

(-)

Pulse

Generator

(Note 2)

(+)

0.01

0

0.4

0.8

Tj - 25°C

Pulse Width = 300µs

1.2

1.6

2.0

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

1000

100

10

Tj = 100°C

1.0

Tj = 25°C

0.1

0.01

0

20 40 60 80 100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 4 Typical Reverse Characteristics

trr

+0.5A

0A

-0.25A

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

-1.0A

Set time base for 10ns/cm

US1A – US1M

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

2 of 2

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