RF2138 Просмотр технического описания (PDF) - RF Micro Devices

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RF2138

3V GSM POWER AMPLIFIER

RF Micro Devices 

RF2138

Application Schematic

VCC

1 nF

120 pF

Very close to

pins 15/16

Instead of a

stripline an inductor

of ~10 nH can be

used

2

4.3 pF

VCC

.040"

1 16 15 14 13

2

12

Quarter Wave

Length

33 pF

Instead of a

stripline an

inductor of 4.7 nH

can be used

RF IN

3

1 nF

180 Ω

4

50 Ω µstrip 33 pF

11

RF OUT

18 pF

5.6 pF

10

VCC 10 nH

56789

33 pF

33 pF

VCC Spacing between

edge of device and

capacitor 0.062"

33 pF

Distance center to

center of capacitors

0.416"

33 pF

Note: All capacitors are standard 0402 multi layer

APC

Internal Schematic

VCC1

5Ω

4.5 pF

VCC2

RF OUT

RF IN

5Ω

1.6k Ω

APC1

APC1

1k Ω

VCC

APC2

300 Ω

VCC

2-124

GND1

GND2

PKG BASE

Rev A9 011031

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