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RF2138 Просмотр технического описания (PDF) - RF Micro Devices

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Компоненты Описание
производитель
RF2138
RFMD
RF Micro Devices RFMD
RF2138 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
2
Typical Applications
• 3V GSM Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• Commercial and Consumer Systems
RF2138
3V GSM POWER AMPLIFIER
• Portable Battery-Powered Equipment
• GPRS Compatible
2
Product Description
The RF2138 is a high power, high efficiency power ampli-
fier module offering high performance in GSM or GPRS
applications. The device is manufactured on an advanced
GaAs HBT process, and has been designed for use as
the final RF amplifier in GSM hand held-digital cellular
equipment and other applications in the 800MHz to
950MHz band. On-board power control provides over
70dB of control range with an analog voltage input, and
provides power down with a logic “low” for standby opera-
tion. The device is self-contained with 50input and the
output can be easily matched to obtain optimum power
and efficiency characteristics. The RF2138 can be used
together with the RF2140 for dual-band operation. The
device is packaged in an ultra-small ceramic package,
minimizing the required board space.
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
1 16 15 14 13
GND2 2
12 RF OUT
RF IN 3
11 RF OUT
GND1 4
10 RF OUT
56789
3.50
3.35
sq.
1
1.50
1.20
4.20
3.95
sq.
0.38
2.00
ALL SOLDER PAD TOLERANCES P0.05mm
0.28
0.13
0.80
0.40
sq.
1.50
sq.
Package Style: MP16K01A
Features
• Single 2.7V to 4.8V Supply Voltage
• +36dBm Output Power at 3.5V
• 32dB Gain with Analog Gain Control
• 58% Efficiency
• 800MHz to 950MHz Operation
• Supports GSM and E-GSM
Ordering Information
RF2138
3V GSM Power Amplifier
RF2138 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A9 011031
2-119

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